jiangsu changjiang electronics technology co., ltd to-2 20 - 3l-c plastic-encapsulate mosfets CJP80N03 n-channel power mosfet description the cjp 80n03 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. feat u res z high densit y cell design for ultra low r ds(on) z full y characterized avalanche voltage and current z good stability and uniformity with high e as z excellent pack age for go od heat dissipation z special process technology for high esd capability applications z power s w itching application z hard switched and high frequency circuits z uninterruptible power supply marking equiv alent circuit maximum ratings ( t a =25 unless otherw ise noted ) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain c urrent i d 80 a pulsed drain c u rrent i dm 320 a single pulsed avala n che energy e as (1) 306 mj power diss i pation p d 1.25 w thermal resistance from junc tion to ambie nt r ja 100 /w junction te mperature t j 150 storage temperature ran g e t stg -55 ~+150 lead temperature for sold eri ng purposes(1/8?? from case for 10s) t l 260 (1).e as condition: v dd =20v,l=0.5mh, r g =25 ? , starting t j = 25c www.cj-elec.com 1 a-1,may,2016 v (br)dss r ds(on) max i d 30v 6.5m 80a @10v ? 10m @ 5 v ? CJP80N03 = device co de solid dot = green molding compound device, xxx if none, the normal device =date code to-220-3l-c 1. ga t e 2. drain 3. source 3 1 2 CJP80N03 xxx
parameter symbol test conditi on min typ max unit off characteristics drain-source breakdo w n voltage v (br) dss v gs = 0v, i d =250a 30 v zero gate voltage drain curren t i dss v ds =30v, v gs =0v 1 a gate-body leakage current i gss v ds =0v, v gs =20v 100 na on characteristics (not e1) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 1.5 3.0 v v gs =10v, i d =30a 5.1 6.5 m ? static drain-source on-sate resistance r ds(on) v gs =5v, i d =24a 7.1 10 m ? forward transcond uctance g fs v ds =5v, i d =24a 20 s dynamic char acte ristics (note 2) input capacitance c iss 2330 output capacitance c oss 460 reverse transfer capacitance c rss v ds =15v,v gs =0v, f =1mhz 230 pf switching char act eristics (note 2) total gate charge q g 51 gate-source charge q gs 14 gate-drain charge q gd v ds =10v, v gs =10v, i d =30a 11 nc turn-on delay time t d (on) 20 turn-on rise time t r 15 turn-off delay time t d(off) 60 turn-off fall time t f v dd =15v,i d =30a, v gs =10v,r g =2.7 ? 10 ns drain-source diod e characteristics drain-source diode forwar d voltage(note1) v sd v gs =0v, i s =24a 1.2 v continuous drain-source diod e for ward current i s 80 a pulsed drain-source diode for ward current i sm 320 a notes: 1. pulse test : pulse widt h 300s, duty cycle 2%. 2. guaranteed by design, not subject to production. www.cj-elec.com 2 a-1,may,2016 0 2 6 ) ( 7 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 a t =25 / unless otherwise specified
0246 0 20 40 60 80 100 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1e-3 0.01 0.1 1 10 100 345678910 0 5 10 15 20 25 30 5 1 01 52 02 53 0 2 3 4 5 6 7 8 9 10 012345 0 20 40 60 80 100 v ds =5v pulsed drain current i d (a) gate to source voltage v gs (v) t r an sf er c h aract eristics t a =25 i d =250ua threshold vol t age threshold voltage v th (v) junction temperature t j ( ) pulsed source current i s (a) source to drain voltage v sd (v) v sd i s t a =100 t a =25 pulsed i d =25a r ds(on) v gs on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) t a =100 t a =25 v gs =5v t a =25 pulsed t a =25 pulsed on-resistance r ds(on) (m ? ) drain current i d (a) i d r ds(on) v gs =10v v gs =4.3v v gs =4v v gs =4.5v,5v v gs =3.8v v gs = 3.5v output c haracteristics drain current i d (a) drain to source voltage v ds (v) typical characteristics www.cj-elec.com 3 a-1,may,2016
www.cj-elec.com a-1,may,2016 to-220-3l-c package outline dimensions min. max. min. max. a 4.400 4.600 0.173 0.181 a1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 d 9.910 10.250 0.390 0.404 e 8.950 9.750 0.352 0.384 e1 12.650 12.950 0.498 0.510 e e1 4.980 5.180 0.196 0.204 f 2.650 2.950 0.104 0.116 h 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 l 12.900 13.400 0.508 0.528 l1 2.850 3.250 0.112 0.128 v ? 3.400 3.800 0.134 0.150 7.500 ref. 0.295 ref. symbol dimensions in millimeters dimensions in inches 0.100 typ. 2.540 typ.
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